Changes in interface properties of TCO/a-Si:H layer by Zn buffer layer in silicon heterojunction solar cells
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tark, S.J. | - |
dc.contributor.author | Son, C.-S. | - |
dc.contributor.author | Kim, D. | - |
dc.date.accessioned | 2021-09-07T20:15:46Z | - |
dc.date.available | 2021-09-07T20:15:46Z | - |
dc.date.created | 2021-06-17 | - |
dc.date.issued | 2011 | - |
dc.identifier.issn | 1225-0562 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/114581 | - |
dc.description.abstract | In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO. | - |
dc.language | Korean | - |
dc.language.iso | ko | - |
dc.subject | a-Si layers | - |
dc.subject | a-Si:H | - |
dc.subject | Al-doped ZnO | - |
dc.subject | AZO | - |
dc.subject | AZO films | - |
dc.subject | AZO thin films | - |
dc.subject | Circular transmission line model | - |
dc.subject | Depth profile | - |
dc.subject | Electrooptical properties | - |
dc.subject | Interface property | - |
dc.subject | Layer interfaces | - |
dc.subject | Oxygen atom | - |
dc.subject | RF magnetrons | - |
dc.subject | rf-Magnetron sputtering | - |
dc.subject | Silicon heterojunction solar cells | - |
dc.subject | Silicon heterojunctions | - |
dc.subject | TCO | - |
dc.subject | Transparent conductive oxide thin film | - |
dc.subject | Transparent conductive oxides | - |
dc.subject | Zn buffer layer | - |
dc.subject | ZnO | - |
dc.subject | Aluminum | - |
dc.subject | Auger electron spectroscopy | - |
dc.subject | Buffer layers | - |
dc.subject | Contact resistance | - |
dc.subject | Deposition | - |
dc.subject | Heat resistance | - |
dc.subject | Heterojunctions | - |
dc.subject | Optical properties | - |
dc.subject | Oxide films | - |
dc.subject | Silicon | - |
dc.subject | Thin films | - |
dc.subject | Transmission line theory | - |
dc.subject | Vapor deposition | - |
dc.subject | Zinc | - |
dc.subject | Zinc oxide | - |
dc.subject | Semiconducting silicon compounds | - |
dc.title | Changes in interface properties of TCO/a-Si:H layer by Zn buffer layer in silicon heterojunction solar cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Tark, S.J. | - |
dc.contributor.affiliatedAuthor | Kim, D. | - |
dc.identifier.doi | 10.3740/MRSK.2011.21.6.341 | - |
dc.identifier.scopusid | 2-s2.0-80051628333 | - |
dc.identifier.bibliographicCitation | Korean Journal of Materials Research, v.21, no.6, pp.341 - 346 | - |
dc.relation.isPartOf | Korean Journal of Materials Research | - |
dc.citation.title | Korean Journal of Materials Research | - |
dc.citation.volume | 21 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 341 | - |
dc.citation.endPage | 346 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001560257 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordPlus | a-Si layers | - |
dc.subject.keywordPlus | a-Si:H | - |
dc.subject.keywordPlus | Al-doped ZnO | - |
dc.subject.keywordPlus | AZO | - |
dc.subject.keywordPlus | AZO films | - |
dc.subject.keywordPlus | AZO thin films | - |
dc.subject.keywordPlus | Circular transmission line model | - |
dc.subject.keywordPlus | Depth profile | - |
dc.subject.keywordPlus | Electrooptical properties | - |
dc.subject.keywordPlus | Interface property | - |
dc.subject.keywordPlus | Layer interfaces | - |
dc.subject.keywordPlus | Oxygen atom | - |
dc.subject.keywordPlus | RF magnetrons | - |
dc.subject.keywordPlus | rf-Magnetron sputtering | - |
dc.subject.keywordPlus | Silicon heterojunction solar cells | - |
dc.subject.keywordPlus | Silicon heterojunctions | - |
dc.subject.keywordPlus | TCO | - |
dc.subject.keywordPlus | Transparent conductive oxide thin film | - |
dc.subject.keywordPlus | Transparent conductive oxides | - |
dc.subject.keywordPlus | Zn buffer layer | - |
dc.subject.keywordPlus | ZnO | - |
dc.subject.keywordPlus | Aluminum | - |
dc.subject.keywordPlus | Auger electron spectroscopy | - |
dc.subject.keywordPlus | Buffer layers | - |
dc.subject.keywordPlus | Contact resistance | - |
dc.subject.keywordPlus | Deposition | - |
dc.subject.keywordPlus | Heat resistance | - |
dc.subject.keywordPlus | Heterojunctions | - |
dc.subject.keywordPlus | Optical properties | - |
dc.subject.keywordPlus | Oxide films | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Transmission line theory | - |
dc.subject.keywordPlus | Vapor deposition | - |
dc.subject.keywordPlus | Zinc | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.subject.keywordPlus | Semiconducting silicon compounds | - |
dc.subject.keywordAuthor | AZO | - |
dc.subject.keywordAuthor | Interface | - |
dc.subject.keywordAuthor | Rf magnetron sputter | - |
dc.subject.keywordAuthor | Silicon heterojunction solar cells | - |
dc.subject.keywordAuthor | TCO | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.