Back surface field properties with different surface conditions for crystalline silicon solar cells
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, H. | - |
dc.contributor.author | Kim, S. | - |
dc.contributor.author | Park, S. | - |
dc.contributor.author | Song, J. | - |
dc.contributor.author | Kim, Y.D. | - |
dc.contributor.author | Tark, S.J. | - |
dc.contributor.author | Kwon, S. | - |
dc.contributor.author | Yoon, S. | - |
dc.contributor.author | Son, C.-S. | - |
dc.contributor.author | Kim, D. | - |
dc.date.accessioned | 2021-09-07T20:17:20Z | - |
dc.date.available | 2021-09-07T20:17:20Z | - |
dc.date.created | 2021-06-17 | - |
dc.date.issued | 2011 | - |
dc.identifier.issn | 1225-0562 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/114590 | - |
dc.description.abstract | To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to 89°C/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface. | - |
dc.language | Korean | - |
dc.language.iso | ko | - |
dc.subject | 4-point probe | - |
dc.subject | Aluminium surface | - |
dc.subject | Annealing condition | - |
dc.subject | Back surface fields | - |
dc.subject | Crystalline silicon solar cells | - |
dc.subject | Flat back surface | - |
dc.subject | Formation process | - |
dc.subject | Hall measurements | - |
dc.subject | Hydrochloric acid solution | - |
dc.subject | Manufacturing cost | - |
dc.subject | Metal etching | - |
dc.subject | Optical profiler | - |
dc.subject | Quasi-steady-state photoconductance | - |
dc.subject | Ramp up rates | - |
dc.subject | Rapid thermal process | - |
dc.subject | Saturation current | - |
dc.subject | Silicon Nitride Film | - |
dc.subject | Solar cell performance | - |
dc.subject | Surface conditions | - |
dc.subject | Surface field | - |
dc.subject | Temperature uniformity | - |
dc.subject | Textured back surface | - |
dc.subject | Aluminum | - |
dc.subject | Carrier concentration | - |
dc.subject | Crystalline materials | - |
dc.subject | Electric resistance | - |
dc.subject | Hydrochloric acid | - |
dc.subject | Morphology | - |
dc.subject | Rapid thermal processing | - |
dc.subject | Scanning electron microscopy | - |
dc.subject | Screen printing | - |
dc.subject | Semiconducting silicon compounds | - |
dc.subject | Silicon nitride | - |
dc.subject | Silicon solar cells | - |
dc.subject | Surface morphology | - |
dc.subject | Silicon wafers | - |
dc.title | Back surface field properties with different surface conditions for crystalline silicon solar cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Tark, S.J. | - |
dc.contributor.affiliatedAuthor | Kim, D. | - |
dc.identifier.doi | 10.3740/MRSK.2011.21.5.243 | - |
dc.identifier.scopusid | 2-s2.0-79960548803 | - |
dc.identifier.bibliographicCitation | Korean Journal of Materials Research, v.21, no.5, pp.243 - 249 | - |
dc.relation.isPartOf | Korean Journal of Materials Research | - |
dc.citation.title | Korean Journal of Materials Research | - |
dc.citation.volume | 21 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 243 | - |
dc.citation.endPage | 249 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001554291 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordPlus | 4-point probe | - |
dc.subject.keywordPlus | Aluminium surface | - |
dc.subject.keywordPlus | Annealing condition | - |
dc.subject.keywordPlus | Back surface fields | - |
dc.subject.keywordPlus | Crystalline silicon solar cells | - |
dc.subject.keywordPlus | Flat back surface | - |
dc.subject.keywordPlus | Formation process | - |
dc.subject.keywordPlus | Hall measurements | - |
dc.subject.keywordPlus | Hydrochloric acid solution | - |
dc.subject.keywordPlus | Manufacturing cost | - |
dc.subject.keywordPlus | Metal etching | - |
dc.subject.keywordPlus | Optical profiler | - |
dc.subject.keywordPlus | Quasi-steady-state photoconductance | - |
dc.subject.keywordPlus | Ramp up rates | - |
dc.subject.keywordPlus | Rapid thermal process | - |
dc.subject.keywordPlus | Saturation current | - |
dc.subject.keywordPlus | Silicon Nitride Film | - |
dc.subject.keywordPlus | Solar cell performance | - |
dc.subject.keywordPlus | Surface conditions | - |
dc.subject.keywordPlus | Surface field | - |
dc.subject.keywordPlus | Temperature uniformity | - |
dc.subject.keywordPlus | Textured back surface | - |
dc.subject.keywordPlus | Aluminum | - |
dc.subject.keywordPlus | Carrier concentration | - |
dc.subject.keywordPlus | Crystalline materials | - |
dc.subject.keywordPlus | Electric resistance | - |
dc.subject.keywordPlus | Hydrochloric acid | - |
dc.subject.keywordPlus | Morphology | - |
dc.subject.keywordPlus | Rapid thermal processing | - |
dc.subject.keywordPlus | Scanning electron microscopy | - |
dc.subject.keywordPlus | Screen printing | - |
dc.subject.keywordPlus | Semiconducting silicon compounds | - |
dc.subject.keywordPlus | Silicon nitride | - |
dc.subject.keywordPlus | Silicon solar cells | - |
dc.subject.keywordPlus | Surface morphology | - |
dc.subject.keywordPlus | Silicon wafers | - |
dc.subject.keywordAuthor | Back surface field (BSF) | - |
dc.subject.keywordAuthor | Flat back surface | - |
dc.subject.keywordAuthor | Ramp up rates | - |
dc.subject.keywordAuthor | Silicon solar cells | - |
dc.subject.keywordAuthor | Textured back surface | - |
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