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Wafer-Scale Growth of ITO Nanorods by Radio Frequency Magnetron Sputtering Deposition

Authors
Park, Jae HyoungPark, Hoo KeunJeong, JinhooKim, WoongMin, Byoung KounDo, Young Rag
Issue Date
2011
Publisher
ELECTROCHEMICAL SOC INC
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.5, pp.K131 - K135
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume
158
Number
5
Start Page
K131
End Page
K135
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/114870
DOI
10.1149/1.3562943
ISSN
0013-4651
Abstract
We demonstrate synthesis of tin-doped indium oxide (ITO) nanorods on 2-in. glass wafers via radio frequency (rf)-magnetron sputtering deposition. The nanorods possessed a single-crystal structure of bixbyite, grew along the < 100 > orientation of the cubic unit cell, and were vertically aligned to the substrates. Height and diameter of the nanorods were as large as similar to 810 nm and 40-100 nm, respectively. The morphological, structural, compositional, optical, and electrical properties of the ITO nanorods were examined with respect to growth temperature (25-500 degrees C) and growth time (10-60 min). ITO nanorod films synthesized at 500 degrees C exhibited excellent electrical and optical property such as a low sheet resistance (similar to 41 Omega/) and high transparency in the wavelength range of visible light (i.e., similar to 87% transmission at 550 nm). The facile approach to synthesize ITO nanorods at a large scale demonstrated in this work may find various applications including the fabrication of high performance optoelectronic devices. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3562943] All rights reserved.
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공과대학 (신소재공학부)
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