Formation of Ni-Silicide at the Interface of Ni/4H-SiC
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Younghun | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-07T21:18:43Z | - |
dc.date.available | 2021-09-07T21:18:43Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/114885 | - |
dc.description.abstract | We report the relationship between the formation of Ni-silicide compounds and the change of the electrical behavior under different post-annealing conditions. Scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), micro-Raman spectroscopy and X-ray diffraction (XRD) techniques were employed to study the formation of the various Ni-silicide compounds at the interface between Ni and 4H-SiC. Also, the electrical properties of the device were analyzed based on its current-voltage (I-V) characteristics under the same conditions. In our experiments, Ni2Si began to form at a post-annealing condition about 700 degrees C. However, a good Ohmic behavior was observed at a post-annealing condition of 1000 degrees C. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3567531] All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | SCHOTTKY DIODES | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | STABILITY | - |
dc.subject | CARBIDE | - |
dc.title | Formation of Ni-Silicide at the Interface of Ni/4H-SiC | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1149/1.3567531 | - |
dc.identifier.scopusid | 2-s2.0-79953206624 | - |
dc.identifier.wosid | 000288867700094 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.5, pp.H551 - H553 | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 158 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | H551 | - |
dc.citation.endPage | H553 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | SCHOTTKY DIODES | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | CARBIDE | - |
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