Electrical Properties of Bi2Ti2O7 Thin Films Grown at Low Temperature by the Pulsed Laser Deposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Lee-Seung | - |
dc.contributor.author | Kim, Jin-Seong | - |
dc.contributor.author | Sun, Jong-Woo | - |
dc.contributor.author | Kweon, Sang-Hyo | - |
dc.contributor.author | Song, Myung-Eun | - |
dc.contributor.author | Paik, Dong-Soo | - |
dc.contributor.author | Sung, Tae-Hyun | - |
dc.contributor.author | Nahm, Sahn | - |
dc.date.accessioned | 2021-09-07T21:23:03Z | - |
dc.date.available | 2021-09-07T21:23:03Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/114908 | - |
dc.description.abstract | A crystalline Bi2Ti2O7 (B2T2) film with a high dielectric constant (epsilon(r)) of 67.2 was formed even at 300 degrees C when the oxygen pressure (OP) exceeded 600 mTorr, even though the Bi4Ti3O12 target was used. The Mn-doping improved the electrical properties of the B2T2 films by producing the doubly ionized, extrinsic oxygen vacancies, which reduced the number of intrinsic oxygen vacancies. The B2T2 film containing 20 mol% of Mn ions, which was annealed under an OP of 75.0 Torr, exhibited a low leakage current density of 5 x 10(-7) A/cm(2) at 0.5 MV/cm(2) and a large epsilon(r) (similar to 73) with a low tan delta (similar to 1.3%). (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3564877] All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | MIM CAPACITORS | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | TRANSISTOR | - |
dc.title | Electrical Properties of Bi2Ti2O7 Thin Films Grown at Low Temperature by the Pulsed Laser Deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Nahm, Sahn | - |
dc.identifier.doi | 10.1149/1.3564877 | - |
dc.identifier.scopusid | 2-s2.0-79953780892 | - |
dc.identifier.wosid | 000289165400017 | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.6, pp.G38 - G41 | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 14 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | G38 | - |
dc.citation.endPage | G41 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | MIM CAPACITORS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | TRANSISTOR | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.