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The vertically stacked organic sensor-transistor on a flexible substrate

Authors
Jeong, Shin WooJeong, Jin WookChang, SeongpilKang, Seung YoulCho, Kyoung IkJu, Byeong Kwon
Issue Date
20-12월-2010
Publisher
AMER INST PHYSICS
Keywords
Flexible electronics
Citation
APPLIED PHYSICS LETTERS, v.97, no.25
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
97
Number
25
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/115110
DOI
10.1063/1.3530448
ISSN
0003-6951
Abstract
The authors report on the photo-response characteristics of flexible sensor-transistor circuits (ST-circuits) made with (poly(3-hexylethiophene)/phenyl-C-61-butryic acid methyl ester) (P3HT/PCBM) bulk heterojunction polymer and pentacene-based organic field-effect transistors, which are stacked via poly(dimethylsiloxane) (PDMS) on the plastic substrate. The results indicate that the anode-source current is variable because of both the charge separation of the photogenerated excitons and the accumulated charges at the OFET channel layer. The light dependent photo response (Delta I/I-0) is modulated from 0.47 to 1.9 by the gate-source voltage at the fixed anode-source voltage of the ST-circuits. (C) 2010 American Institute of Physics. [doi:10.1063/1.3530448]
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