Self-catalytic growth of silicon nanowires on stainless steel
DC Field | Value | Language |
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dc.contributor.author | Kim, Myoung-Ha | - |
dc.contributor.author | Park, Yong-Hee | - |
dc.contributor.author | Kim, Ilsoo | - |
dc.contributor.author | Park, Tae-Eon | - |
dc.contributor.author | Sung, Yun-Mo | - |
dc.contributor.author | Choi, Heon-Jin | - |
dc.date.accessioned | 2021-09-07T22:53:17Z | - |
dc.date.available | 2021-09-07T22:53:17Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2010-11-15 | - |
dc.identifier.issn | 0167-577X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/115325 | - |
dc.description.abstract | Silicon nanowires were grown on a stainless steel substrate using a vapor-liquid-solid mechanism in self-catalytic mode. The multi-component Fe-Cr-Ni-Mn-Si catalyst that was formed from the substrate leads the growth of single-crystal Si nanowires with lengths of several micrometers and diameters ranging from 100 to 150 nm. A systematic investigation of the processing parameters revealed that the hydrogen flow rate is critical to the growth of the nanowires. At a high flow rate that exceeds 1000 sccm, the substrate is embrittled by H-2, and liquid droplets, which lead the growth of nanowires by the vapor-liquid-solid mechanism, are formed on the substrate. Electrical transport measurements indicated that the nanowires grown with the multi-component catalyst have electrical properties comparable to those grown by a single-component Ti catalyst. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | HYDROGEN | - |
dc.subject | SI | - |
dc.title | Self-catalytic growth of silicon nanowires on stainless steel | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Yun-Mo | - |
dc.identifier.doi | 10.1016/j.matlet.2010.06.024 | - |
dc.identifier.scopusid | 2-s2.0-77955690870 | - |
dc.identifier.wosid | 000282907700010 | - |
dc.identifier.bibliographicCitation | MATERIALS LETTERS, v.64, no.21, pp.2306 - 2309 | - |
dc.relation.isPartOf | MATERIALS LETTERS | - |
dc.citation.title | MATERIALS LETTERS | - |
dc.citation.volume | 64 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 2306 | - |
dc.citation.endPage | 2309 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordAuthor | Nanomaterials | - |
dc.subject.keywordAuthor | Crystal growth | - |
dc.subject.keywordAuthor | Semiconductors | - |
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