Temperature Dependent Study of Random Telegraph Noise in Gate-All-Around PMOS Silicon Nanowire Field-Effect Transistors
DC Field | Value | Language |
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dc.contributor.author | Hong, B. H. | - |
dc.contributor.author | Choi, L. | - |
dc.contributor.author | Jung, Y. C. | - |
dc.contributor.author | Hwang, S. W. | - |
dc.contributor.author | Cho, K. H. | - |
dc.contributor.author | Yeo, K. H. | - |
dc.contributor.author | Kim, D. -W. | - |
dc.contributor.author | Jin, G. Y. | - |
dc.contributor.author | Park, D. | - |
dc.contributor.author | Song, S. H. | - |
dc.contributor.author | Lee, Y. Y. | - |
dc.contributor.author | Son, M. H. | - |
dc.contributor.author | Ahn, D. | - |
dc.date.accessioned | 2021-09-07T23:07:11Z | - |
dc.date.available | 2021-09-07T23:07:11Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2010-11 | - |
dc.identifier.issn | 1536-125X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/115385 | - |
dc.description.abstract | We report the random telegraph noise observed in gate-all-around (GAA) PMOS silicon nanowire FETs (SNWFETs) with the radius of 5 nm, at various temperatures (Ts) down to 4.2 K. From the T-dependence of the capture/emission time, we obtain the energy and the charging status of the trap states. The gate bias dependence and the T-dependence of the scattering coefficient-mobility product extracted from the relative fluctuation amplitude of the drain current are consistent with the fact that the surface roughness scattering is dominant in GAA PMOS SNWFETs. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | MODEL | - |
dc.title | Temperature Dependent Study of Random Telegraph Noise in Gate-All-Around PMOS Silicon Nanowire Field-Effect Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, S. W. | - |
dc.identifier.doi | 10.1109/TNANO.2010.2045006 | - |
dc.identifier.wosid | 000284091300016 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.9, no.6, pp.754 - 758 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.title | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.volume | 9 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 754 | - |
dc.citation.endPage | 758 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordAuthor | Gate all around (GAA) | - |
dc.subject.keywordAuthor | random telegraph noise (RTN) | - |
dc.subject.keywordAuthor | silicon nanowire FET (SNWFET) | - |
dc.subject.keywordAuthor | temperature dependence | - |
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