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Development of a hybrid inverter through integration of organic and inorganic thin film transistors

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dc.contributor.authorPark, Jung-Ho-
dc.contributor.authorKwon, Jae-Hong-
dc.contributor.authorChang, Seongpil-
dc.contributor.authorSeo, Han-
dc.contributor.authorChoi, Byung-Hyun-
dc.contributor.authorJi, Mi-Jung-
dc.contributor.authorChoi, Jinnil-
dc.contributor.authorPak, James Jungho-
dc.contributor.authorJu, Byeong-Kwon-
dc.date.accessioned2021-09-08T00:18:44Z-
dc.date.available2021-09-08T00:18:44Z-
dc.date.created2021-06-14-
dc.date.issued2010-09-01-
dc.identifier.issn0040-6090-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/115702-
dc.description.abstractIn this paper, complementary thin-film transistor (TFT) inverter is fabricated with organic-inorganic hybrid channels. By adopting p-channel pentacene and n-channel ZnO, we have fabricated a device of hybrid complementary TFT inverter by using same electrode in organic-inorganic hybrid channels. To be accomplished Ohmic-contact in organic-inorganic hybrid channels, we adapted to n-channel staggered TFT and p-channel coplanar TFT. In results, a hybrid inverter built through integration of organic and inorganic TFT shows that the typical inverter response to stage switching is clearly observed between 0 and 40 V. for both input directions, displaying a high voltage gain (dV(OUT)/dV(IN))>16. (c) 2010 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE SA-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.titleDevelopment of a hybrid inverter through integration of organic and inorganic thin film transistors-
dc.typeArticle-
dc.contributor.affiliatedAuthorChoi, Jinnil-
dc.contributor.affiliatedAuthorPak, James Jungho-
dc.contributor.affiliatedAuthorJu, Byeong-Kwon-
dc.identifier.doi10.1016/j.tsf.2010.03.141-
dc.identifier.wosid000282242600027-
dc.identifier.bibliographicCitationTHIN SOLID FILMS, v.518, no.22, pp.6264 - 6267-
dc.relation.isPartOfTHIN SOLID FILMS-
dc.citation.titleTHIN SOLID FILMS-
dc.citation.volume518-
dc.citation.number22-
dc.citation.startPage6264-
dc.citation.endPage6267-
dc.type.rimsART-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryMaterials Science, Coatings & Films-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordAuthorThin film transistor-
dc.subject.keywordAuthorInverter-
dc.subject.keywordAuthorHybrid-
dc.subject.keywordAuthorZnO-
dc.subject.keywordAuthorPentacene-
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