Proton irradiation effects on AlN/GaN high electron mobility transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lo, C. F. | - |
dc.contributor.author | Chang, C. Y. | - |
dc.contributor.author | Chu, B. H. | - |
dc.contributor.author | Kim, H. -Y. | - |
dc.contributor.author | Kim, J. | - |
dc.contributor.author | Cullen, David A. | - |
dc.contributor.author | Zhou, Lin | - |
dc.contributor.author | Smith, David. J. | - |
dc.contributor.author | Pearton, S. J. | - |
dc.contributor.author | Dabiran, Amir | - |
dc.contributor.author | Cui, B. | - |
dc.contributor.author | Chow, P. P. | - |
dc.contributor.author | Jang, S. | - |
dc.contributor.author | Ren, F. | - |
dc.date.accessioned | 2021-09-08T00:44:24Z | - |
dc.date.available | 2021-09-08T00:44:24Z | - |
dc.date.issued | 2010-09 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.issn | 2166-2746 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/115838 | - |
dc.description.abstract | AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2x10(11) to 2x10(15) protons/cm(2). Changes from 10% to 35% of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2x10(11) protons/cm(2) irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3482335] | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Proton irradiation effects on AlN/GaN high electron mobility transistors | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1116/1.3482335 | - |
dc.identifier.scopusid | 2-s2.0-77957741389 | - |
dc.identifier.wosid | 000282434900003 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.28, no.5, pp L47 - L51 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 28 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | L47 | - |
dc.citation.endPage | L51 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ALGAN/GAN HEMTS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | GANHEMTS | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.subject.keywordPlus | HFETS | - |
dc.subject.keywordPlus | DC | - |
dc.subject.keywordAuthor | high electron mobility transistors | - |
dc.subject.keywordAuthor | proton effects | - |
dc.subject.keywordAuthor | surface scattering | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea+82-2-3290-2963
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.