Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Jeon, Joon-Woo | - |
dc.contributor.author | Park, Seong-Han | - |
dc.contributor.author | Jung, Se-Yeon | - |
dc.contributor.author | Lee, Sang Youl | - |
dc.contributor.author | Moon, Jihyung | - |
dc.contributor.author | Song, June-O | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-08T00:47:34Z | - |
dc.date.available | 2021-09-08T00:47:34Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2010-08-30 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/115855 | - |
dc.description.abstract | We report on the formation of low-resistance Ohmic contacts to N-face n-GaN for high-power vertical light-emitting diodes using an Al-Ga solid solution (50 nm)/Ti(30 nm)/Al(200 nm) scheme and compare them with Ti(30 nm)/Al(200 nm) contacts. The Al-Ga solid solution layer is introduced to minimize the formation of Ga vacancies near the N-face n-GaN surface. It is shown that, unlike the Ti/Al contacts, the Al-Ga solid solution/Ti/Al contacts exhibit Ohmic behavior with a resistivity of 4.1 X 10(-4) Omega cm(2), even after annealing at 250 degrees C. X-ray photoemission spectroscopy and secondary ion mass spectrometry examinations are performed to understand the temperature dependence of the electrical properties. (C) 2010 American Institute of Physics. [doi:10.1063/1.3484152] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | CRYSTAL-POLARITY | - |
dc.subject | TI/AL CONTACTS | - |
dc.subject | P-GAN | - |
dc.title | Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1063/1.3484152 | - |
dc.identifier.scopusid | 2-s2.0-77956371633 | - |
dc.identifier.wosid | 000282187200022 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.97, no.9 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 97 | - |
dc.citation.number | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CRYSTAL-POLARITY | - |
dc.subject.keywordPlus | TI/AL CONTACTS | - |
dc.subject.keywordPlus | P-GAN | - |
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