Air stable, ambipolar organic transistors and inverters based upon a heterojunction structure of pentacene on N,N '-ditridecylperylene-3,4,9,10-tetracarboxylic di-imide
DC Field | Value | Language |
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dc.contributor.author | An, Min-Jun | - |
dc.contributor.author | Seo, Hoon-Seok | - |
dc.contributor.author | Zhang, Ying | - |
dc.contributor.author | Oh, Jeong-Do | - |
dc.contributor.author | Choi, Jong-Ho | - |
dc.date.accessioned | 2021-09-08T01:32:16Z | - |
dc.date.available | 2021-09-08T01:32:16Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2010-07-12 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/116061 | - |
dc.description.abstract | In this paper, we report on the fabrication and electrical characterization of top-contact, ambipolar organic field-effect transistors (OFETs) and inverters based upon a heterostructure of p-type pentacene on n-type N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (P13), using the neutral cluster beam deposition (NCBD) method. The device characteristics measured as a function of both P13 and pentacene layer thicknesses revealed that OFETs with thicknesses of P13 (300 angstrom) and pentacene (200 angstrom) showed high air-stability and well-balanced ambipolarity with hole and electron mobilities of 0.12 and 0.08 cm(2)/V s. The complementary inverters, comprising two identical ambipolar OFETs, were found to operate both in the first and third quadrants of the transfer curves and exhibited a high voltage inversion gain of 13, good noise margins, and little hysteresis under ambient conditions. The results presented demonstrate that the NCBD-based ambipolar transistors and inverters qualify them as promising potential candidates for the construction of high-performance, organic thin film-based integrated circuits. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3460282] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | FABRICATION | - |
dc.subject | MOBILITY | - |
dc.title | Air stable, ambipolar organic transistors and inverters based upon a heterojunction structure of pentacene on N,N '-ditridecylperylene-3,4,9,10-tetracarboxylic di-imide | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Jong-Ho | - |
dc.identifier.doi | 10.1063/1.3460282 | - |
dc.identifier.scopusid | 2-s2.0-77955165045 | - |
dc.identifier.wosid | 000279999800080 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.97, no.2 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 97 | - |
dc.citation.number | 2 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordAuthor | calibration | - |
dc.subject.keywordAuthor | electric fuses | - |
dc.subject.keywordAuthor | elemental semiconductors | - |
dc.subject.keywordAuthor | integrated circuits | - |
dc.subject.keywordAuthor | lumped parameter networks | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | wafer level packaging | - |
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