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The effect of energy level offset between Ir dopant and carbazole hosts on the emission efficiency

Authors
Kwon, SoonnamWee, Kyung-RyangKim, Jeong WonKang, Sang Ook
Issue Date
12-7월-2010
Publisher
AMER INST PHYSICS
Keywords
integrated optics; nonlinear optics; optical materials; optical waveguides; photonic switching systems; proteins
Citation
APPLIED PHYSICS LETTERS, v.97, no.2
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
97
Number
2
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/116063
DOI
10.1063/1.3462931
ISSN
0003-6951
Abstract
The interface energy offsets of various carbazole hosts and iridium (III) [bis(4,6-difluorophenyl) pyridinato-N, C-2']-tetrakis(1-pyrazolyl) borate (FIr6) and their influence on the efficiency were investigated. Vacuum level shifted by +0.12 eV for bis(4-(N-carbazolyl)phenyl) dimethylsilane (Me2SiCBP2) and FIr6 interface, which was negligible for other hosts and FIr6 interface. As a result, the hole injection from the host to the guest was almost barrier free to reach a high efficiency of 17.1% in the Me2SiCBP2 based device. It dropped to 14% when N, N'-dicarbazolyl-3,5-benzene (mCP) was used as the host, which is the reminiscent of the existence of a hole injection barrier (-0.16 eV). (C) 2010 American Institute of Physics. [doi:10.1063/1.3462931]
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