OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol-gel reaction
- Authors
- Choi, June Whan; Yoon, Ho Gyu; Kim, Jai Kyeong
- Issue Date
- 6월-2010
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Organic thin-film transistors; OTFTs; Organic-inorganic hybrid materials; Hybrid gate insulators; Sol-gel materials; Pentacene organic semiconductor
- Citation
- ORGANIC ELECTRONICS, v.11, no.6, pp.1145 - 1148
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 11
- Number
- 6
- Start Page
- 1145
- End Page
- 1148
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/116394
- DOI
- 10.1016/j.orgel.2010.03.011
- ISSN
- 1566-1199
- Abstract
- The work presented here focuses on the preparation and characterization of gate dielectrics in organic thin-film transistors (OTFTs), fabricated by the sol-gel process. Hybrid dielectrics were prepared with acryl UV resin, titanium n-butoxide, catalytic HCl, and acetylacetone by sol-gel process and patterned by UV cross-linking below 120 degrees C. Leakage currents of dielectric layers remained below 10 (9) A under operating voltage and dielectric constants were measured to be similar to 6.5 at 10 kHz. The field effect mobility and on-off ratio were similar to 0.86 cm(2)/V s and similar to 10(4), respectively. These results demonstrate that sol-gel hybrid systems are suitable for gate dielectrics in OTFTs. (C) 2010 Elsevier B.V. All rights reserved.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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