High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters
- Authors
- Kim, Sun-Kyung; Lee, Jin Wook; Ee, Ho-Seok; Moon, Yong-Tae; Kwon, Soon-Hong; Kwon, Hoki; Park, Hong-Gyu
- Issue Date
- 24-5월-2010
- Publisher
- OPTICAL SOC AMER
- Citation
- OPTICS EXPRESS, v.18, no.11, pp.11025 - 11032
- Indexed
- SCIE
SCOPUS
- Journal Title
- OPTICS EXPRESS
- Volume
- 18
- Number
- 11
- Start Page
- 11025
- End Page
- 11032
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/116430
- DOI
- 10.1364/OE.18.011025
- ISSN
- 1094-4087
- Abstract
- We demonstrate a highly-efficient, large-area (1x1 mm(2)) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased similar to 1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation. (C) 2010 Optical Society of America
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Collections - College of Science > Department of Physics > 1. Journal Articles
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