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Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching

Authors
Jung, YounghunKim, JihyunJang, SoohwanBaik, Kwang HyeonSeo, Yong GonHwang, Sung-Min
Issue Date
26-4월-2010
Publisher
OPTICAL SOC AMER
Citation
OPTICS EXPRESS, v.18, no.9, pp.9728 - 9732
Indexed
SCIE
SCOPUS
Journal Title
OPTICS EXPRESS
Volume
18
Number
9
Start Page
9728
End Page
9732
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/116619
DOI
10.1364/OE.18.009728
ISSN
1094-4087
Abstract
The extraction efficiency of nonpolar a-plane (11-20) GaN LEDs on sapphire substrates has been enhanced by selectively etching the mesa sidewall faces and the n-type GaN surfaces with photoenhanced chemical wet etching. Submicron-sized trigonal prisms having prismatic planes of {1-100} were clearly displayed on the n-type GaN surfaces as well as the sidewall face after 5 min etching at 60 degrees C. The radiation patterns have shown that more light is extracted in all directions and the output powers of surface textured a-plane GaN LEDs have increased by 25% compared with control samples. PEC wet etching produced unique feature of etching morphology on the mesa sidewall faces and the n-type GaN surface. (C) 2010 Optical Society of America
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