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The response characteristics of a gas sensor based on poly-3-hexylithiophene thin-film transistors

Authors
Jeong, Jin WookLee, Yang DooKim, Young MinPark, Young WookChoi, Jin HwanPark, Tae HyunSoo, Choi DongWon, Song MyungHan, Il KiJu, Byeong Kwon
Issue Date
8-4월-2010
Publisher
ELSEVIER SCIENCE SA
Keywords
Gas sensor; NH3 sensor; Poly-3-hexylthiophene; Organic semiconductor; Organic thin-film transistor
Citation
SENSORS AND ACTUATORS B-CHEMICAL, v.146, no.1, pp.40 - 45
Indexed
SCIE
SCOPUS
Journal Title
SENSORS AND ACTUATORS B-CHEMICAL
Volume
146
Number
1
Start Page
40
End Page
45
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/116641
DOI
10.1016/j.snb.2010.02.019
ISSN
0925-4005
Abstract
This paper studies the response characteristics of a gas sensor for organic thin-film transistors (OTFTs), made from spin-coated poly-3-hexylthiophene (P3HT) on a thermally grown SiO2/Si wafer. The gas response characteristics of OTFT sensors are observed from the change in the drain-source current, as a function of time. when the P3HT-based OTFT sensors of different channel widths are exposed to cycles of exposure to and the evacuation of NH3 gas, with concentration ranging from 10 to 100 ppm at room temperature in normal atmosphere. The measured drain-source current decreases rapidly with time after exposure to NH3 gas and the response characteristics of the drain-source current are seen to be higher for larger values of NH3 gas concentration. Also, the response characteristics of the OTFT sensor show that there is a shift in the threshold-voltage as well as a change in mobility after exposure to NH3 gas. (C) 2010 Elsevier B.V. All rights reserved.
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