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Nonvolatile memory devices based on few-layer graphene films
- Authors
- Doh, Yong-Joo; Yi, Gyu-Chul
- Issue Date
- 12-3월-2010
- Publisher
- IOP PUBLISHING LTD
- Citation
- NANOTECHNOLOGY, v.21, no.10
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 21
- Number
- 10
- ISSN
- 0957-4484
- Abstract
- We report on the electrical characteristics of few-layer graphene (FLG) field-effect devices with their various thicknesses. In combination with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)], FLG/ferroelectric devices exhibited nonvolatile resistance changes due to a polarization switching of the P(VDF/TrFE) layer. The bistability and retention properties were highly sensitive to the FLG thickness, which is attributed to a charge screening effect in FLG films.
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