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High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators

Authors
Kim, Youn SunJung, Ki HwaLee, U. RaKim, Kyung HwanHoang, Mai HaJin, Jung-IlChoi, Dong Hoon
Issue Date
8-3월-2010
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.96, no.10
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
96
Number
10
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/116817
DOI
10.1063/1.3299022
ISSN
0003-6951
Abstract
Organic-soluble DNAs bearing chalcone moieties were synthesized by using purified natural sodium DNA. In addition to the chalcone-containing DNA homopolymer (CcDNA), a copolymer (CTMADNA-co-CcDNA) was synthesized. They were employed as gate insulators for fabricating organic thin-film transistors. An organic semiconductor (5,5'-(9,10-bis((4-hexylphenyl)ethynyl) anthracene-2,6-yl-diyl)bis(ethyne-2,1-diyl)bis(2-hexylthiophene; HB-ant-THT) was deposited on the photocrosslinked DNA-based gate insulators via a solution process. Interestingly, the resulting TFT devices had extremely high field-effect mobilities, and their corresponding transfer curves indicated low hysteresis. The carrier mobility of the device with HB-ant-THT deposited on the CTMADNA-co-CcDNA gate insulator was the best, i.e., 0.31 cm(2) V-1 s(-1) (I-on/I-off=1.0 x 10(4)). (C) 2010 American Institute of Physics. [doi: 10.1063/1.3299022]
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