Effect of gate dielectrics on the device performance of SnO2 nanowire field effect transistors

Abstract

The effect of the gate dielectric materials on the device performance of SnO2 nanowire field effect transistors (FETs) was investigated. The usage of Al-doped TiO2 layer with a large dielectric constant, whose atomic layer deposition process was optimized based on a serially connected capacitor model, enhanced the device performance with lower operation voltages compared to those of SiO2 or Al2O3 film in an accumulated channel. The higher dielectric constant is attributed to give a lower threshold voltage and a smaller subthreshold slope, which will be useful for the low voltage operation of the nanowire FETs. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3357432]