Two inch large area patterning on a vertical light-emitting diode by nano-imprinting technology
DC Field | Value | Language |
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dc.contributor.author | Byeon, Kyeong-Jae | - |
dc.contributor.author | Hong, Eun-Ju | - |
dc.contributor.author | Park, Hyoungwon | - |
dc.contributor.author | Yoon, Kyung-Min | - |
dc.contributor.author | Song, Hyun Don | - |
dc.contributor.author | Lee, Jin Wook | - |
dc.contributor.author | Kim, Sun-Kyung | - |
dc.contributor.author | Cho, Hyun Kyong | - |
dc.contributor.author | Kwon, Ho Ki | - |
dc.contributor.author | Lee, Heon | - |
dc.date.accessioned | 2021-09-08T04:37:25Z | - |
dc.date.available | 2021-09-08T04:37:25Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2010-03-04 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/116826 | - |
dc.description.abstract | A vertical light-emitting diode (LED) with a chip size of 500 x 500 mu m(2) was fabricated by the laser lift-off (LLO) process of an InGaN-based blue LED wafer. After the LLO process, photonic crystal patterns by UV nano-imprint lithography were formed on the n-GaN top layer of the vertical LED over the entire area with a diameter of 2 inches. As the result of n-GaN patterning, light output power of the vertical LED with photonic crystals was increased by up to 44% compared to that of the vertical LED without a photonic crystal at a driving current of 1000 mA. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | GAN | - |
dc.title | Two inch large area patterning on a vertical light-emitting diode by nano-imprinting technology | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1088/0268-1242/25/3/035008 | - |
dc.identifier.scopusid | 2-s2.0-76649132051 | - |
dc.identifier.wosid | 000274318300021 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.25, no.3 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 25 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | GAN | - |
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