Role of the ambient oxygen on the silver thick-film contact formation for crystalline silicon solar cells
- Authors
- Cho, Sung-Bin; Hong, Kyoung-Kook; Huh, Joo-Youl; Park, Hyun Jung; Jeong, Ji-Weon
- Issue Date
- 3월-2010
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Ag thick-film metallization; Oxygen partial pressure; Interfacial reaction; Glass frit; Silicon solar cell
- Citation
- CURRENT APPLIED PHYSICS, v.10, pp.S222 - S225
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 10
- Start Page
- S222
- End Page
- S225
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/116899
- DOI
- 10.1016/j.cap.2009.11.054
- ISSN
- 1567-1739
- Abstract
- In order to understand the mechanism of Ag crystallite formation at the paste/Si interface, the interfacial reactions between a Ag paste containing PbO-based glass frit and an n-type (100) Si wafer during firing at 800 degrees C were examined by varying the oxygen partial pressure (Po-2) in the firing ambience The formation of inverted pyramidal Ag crystallites at the glass/Si interface was attributed to the redox reaction between the Ag+ ions dissolved in the fluidized glass and the Si wafer Without any oxygen in the firing ambience, no Ag crystallite was formed The Po-2 in the firing ambience strongly affected the size and distribution of the Ag crystallites, as well as the sintering behavior of Ag powder. via its influence on the reaction forming the Ag. ions The present study results demonstrated that the ambient oxygen plays a crucial role in the formation of thick-film Ag contacts for crystalline Si solar cells (C) 2009 Elsevier B.V. All rights reserved
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.