Optical characterizations of GaN nanorods fabricated by natural lithography
DC Field | Value | Language |
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dc.contributor.author | Kim, Byung-Jae | - |
dc.contributor.author | Bang, Joona | - |
dc.contributor.author | Kim, Sung Hyun | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-08T04:52:54Z | - |
dc.date.available | 2021-09-08T04:52:54Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2010-03 | - |
dc.identifier.issn | 0256-1115 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/116914 | - |
dc.description.abstract | We fabricated GaN/Sapphire nanorods by nanosphere lithography (NSL) using SiO2 nanospheres. Arrays of SiO2 nanospheres were packed on GaN, followed by dry-etching via inductively Coupled plasma (ICP) etching. SiO2 nanospheres served as the etching mask under our etching conditions. Finally, a sapphire substrate under GaN was exposed by dry-etching. A significant blue shift was observed in the room temperature photoluminescence (PL) spectrum from GaN/Sapphire nanorods when the underlying Al2O3 was exposed. GaN nanorods were fabricated by simple and reproducible methods, where SiO2 nanospheres were successfully used as the etching mask. In addition, a blue-shift in PL by the band-filling effect was observed due to the GaN nanostructures. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INSTITUTE CHEMICAL ENGINEERS | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | GALLIUM NITRIDE NANORODS | - |
dc.subject | GROWTH | - |
dc.title | Optical characterizations of GaN nanorods fabricated by natural lithography | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Bang, Joona | - |
dc.contributor.affiliatedAuthor | Kim, Sung Hyun | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1007/s11814-010-0107-9 | - |
dc.identifier.scopusid | 2-s2.0-77951642400 | - |
dc.identifier.wosid | 000275218200049 | - |
dc.identifier.bibliographicCitation | KOREAN JOURNAL OF CHEMICAL ENGINEERING, v.27, no.2, pp.693 - 696 | - |
dc.relation.isPartOf | KOREAN JOURNAL OF CHEMICAL ENGINEERING | - |
dc.citation.title | KOREAN JOURNAL OF CHEMICAL ENGINEERING | - |
dc.citation.volume | 27 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 693 | - |
dc.citation.endPage | 696 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001423509 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Engineering, Chemical | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | GALLIUM NITRIDE NANORODS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | Natural Lithography | - |
dc.subject.keywordAuthor | Quantum Effects | - |
dc.subject.keywordAuthor | Nanorods | - |
dc.subject.keywordAuthor | Band Filling | - |
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