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Fabrication and Characterization of an Enhancement-Mode Planar Resonant Tunneling Transistor

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dc.contributor.authorSon, SeungHun-
dc.contributor.authorHwang, SungWoo-
dc.contributor.authorAhn, Doyeol-
dc.contributor.authorLee, JungIll-
dc.contributor.authorPark, YoungJu-
dc.contributor.authorYu, YunSeop-
dc.date.accessioned2021-09-08T06:04:47Z-
dc.date.available2021-09-08T06:04:47Z-
dc.date.created2021-06-11-
dc.date.issued2010-01-
dc.identifier.issn1536-125X-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/117250-
dc.description.abstractWe report the fabrication and characterization of a planar resonant tunneling transistor (PRTT) using a GaAs/AlGaAs heterostructure wafer. Our PRTT operates as an enhancement-mode device, and shows the negative differential resistance (NDR) modulated with the gate bias in an extremely wide range (from the fully depleted dot to the dot in a single-electron transistor regime). This NDR spectrum represents a full, gate-bias-modulated evolution of the 0-D states in a quantum dot. Our data are also consistent with the ground (E-1) and the first excited state (E-2) of the Fock-Darwin states.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectELECTRONIC STATES-
dc.subjectQUANTUM-DOT-
dc.subjectTRANSPORT-
dc.subjectDIODES-
dc.titleFabrication and Characterization of an Enhancement-Mode Planar Resonant Tunneling Transistor-
dc.typeArticle-
dc.contributor.affiliatedAuthorHwang, SungWoo-
dc.identifier.doi10.1109/TNANO.2009.2018109-
dc.identifier.scopusid2-s2.0-75449093028-
dc.identifier.wosid000275725000016-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON NANOTECHNOLOGY, v.9, no.1, pp.123 - 127-
dc.relation.isPartOfIEEE TRANSACTIONS ON NANOTECHNOLOGY-
dc.citation.titleIEEE TRANSACTIONS ON NANOTECHNOLOGY-
dc.citation.volume9-
dc.citation.number1-
dc.citation.startPage123-
dc.citation.endPage127-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusELECTRONIC STATES-
dc.subject.keywordPlusQUANTUM-DOT-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusDIODES-
dc.subject.keywordAuthorEnhancement mode-
dc.subject.keywordAuthorFock-Darwin states-
dc.subject.keywordAuthorin-plane gates (IPGs)-
dc.subject.keywordAuthorresonant tunneling-
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