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Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Hong-Yeol | - |
| dc.contributor.author | Kim, Jihyun | - |
| dc.contributor.author | Ren, F. | - |
| dc.contributor.author | Jang, Soohwan | - |
| dc.date.accessioned | 2021-09-08T06:12:25Z | - |
| dc.date.available | 2021-09-08T06:12:25Z | - |
| dc.date.created | 2021-06-11 | - |
| dc.date.issued | 2010-01 | - |
| dc.identifier.issn | 1071-1023 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/117293 | - |
| dc.description.abstract | InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5x10(11) cm(-2) neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | A V S AMER INST PHYSICS | - |
| dc.subject | GALLIUM NITRIDE | - |
| dc.subject | PROTON IRRADIATION | - |
| dc.subject | GAN | - |
| dc.subject | DAMAGE | - |
| dc.subject | TEMPERATURE | - |
| dc.subject | GAAS | - |
| dc.title | Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
| dc.identifier.doi | 10.1116/1.3268136 | - |
| dc.identifier.wosid | 000275511800035 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.28, no.1, pp.27 - 29 | - |
| dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
| dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
| dc.citation.volume | 28 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 27 | - |
| dc.citation.endPage | 29 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | GALLIUM NITRIDE | - |
| dc.subject.keywordPlus | PROTON IRRADIATION | - |
| dc.subject.keywordPlus | GAN | - |
| dc.subject.keywordPlus | DAMAGE | - |
| dc.subject.keywordPlus | TEMPERATURE | - |
| dc.subject.keywordPlus | GAAS | - |
| dc.subject.keywordAuthor | annealing | - |
| dc.subject.keywordAuthor | deep levels | - |
| dc.subject.keywordAuthor | gallium compounds | - |
| dc.subject.keywordAuthor | III-V semiconductors | - |
| dc.subject.keywordAuthor | indium compounds | - |
| dc.subject.keywordAuthor | light emitting diodes | - |
| dc.subject.keywordAuthor | neutron effects | - |
| dc.subject.keywordAuthor | quantum well devices | - |
| dc.subject.keywordAuthor | wide band gap semiconductors | - |
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