Dual-Color Emission in Hybrid III-Nitride/ZnO Light Emitting Diodes
- Authors
- Namkoong, Gon; Trybus, Elaissa; Cheung, Maurice C.; Doolittle, W. Alan; Cartwright, Alexander N.; Ferguson, Ian; Seong, Tae-Yeon; Nause, Jeff
- Issue Date
- 2010
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Citation
- APPLIED PHYSICS EXPRESS, v.3, no.2
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS EXPRESS
- Volume
- 3
- Number
- 2
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/118559
- DOI
- 10.1143/APEX.3.022101
- ISSN
- 1882-0778
- Abstract
- We report dual-color production of the blue and green regions using hybrid nitride/ZnO light emitting diode (LED) structures grown on ZnO substrates. The blue emission is ascribed to the near-band edge transition in InGaN while green emission is related to Zn-related defect levels formed by the unintentional interdiffusion of Zn into the InGaN active layer from the ZnO substrates. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/APEX.3.022101
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.