Effects of Nitride-Based Plasma Pretreatment Prior to SiNx Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates
DC Field | Value | Language |
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dc.contributor.author | Kim, Ji Ha | - |
dc.contributor.author | Choi, Hong Goo | - |
dc.contributor.author | Ha, Min-Woo | - |
dc.contributor.author | Song, Hong Joo | - |
dc.contributor.author | Roh, Cheong Hyun | - |
dc.contributor.author | Lee, Jun Ho | - |
dc.contributor.author | Park, Jung Ho | - |
dc.contributor.author | Hahn, Cheol-Koo | - |
dc.date.accessioned | 2021-09-08T10:04:08Z | - |
dc.date.available | 2021-09-08T10:04:08Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2010 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/118572 | - |
dc.description.abstract | The effects of nitride-based plasma pretreatment on the output characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) on silicon substrates are investigated. N-2 and NH3 plasma pre-treatment methods are studied to overcome the RF dispersion phenomenon caused by nitrogen-vacancy (V-N)-related defect reduction. It is found that the nitride-based plasma pretreatment is effective to overcome the RF dispersion in AlGaN/GaN HEMTs on Si. The NH3 plasma pretreatment markedly reduced RF dispersion from 63 to 1%. This is considered to be attributable to the reduction of the effective V-N-related defect density and elimination of carbon/oxide residuals on the surface of AlGaN/GaN HEMTs. A NH3 plasma pretreatment prior to SiNx 100 nm passivation in the AlGaN/GaN HEMTs on Si markedly improves the total output power from 15 to 18.1 dBm under the operating conditions of V-DS = 15 V/V-GS = -1V. (C) 2010 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | SURFACE PASSIVATION | - |
dc.subject | CURRENT COLLAPSE | - |
dc.subject | GAN | - |
dc.title | Effects of Nitride-Based Plasma Pretreatment Prior to SiNx Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jung Ho | - |
dc.identifier.doi | 10.1143/JJAP.49.04DF05 | - |
dc.identifier.scopusid | 2-s2.0-77952708255 | - |
dc.identifier.wosid | 000277301300107 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.4 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 49 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SURFACE PASSIVATION | - |
dc.subject.keywordPlus | CURRENT COLLAPSE | - |
dc.subject.keywordPlus | GAN | - |
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