Formation of TiO2 Nano Pattern on GaN-Based Light-Emitting Diodes for Light Extraction Efficiency
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Joong-Yeon | - |
dc.contributor.author | Byeon, Kyeong-Jae | - |
dc.contributor.author | Park, Hyoungwon | - |
dc.contributor.author | Kim, Hyeong-Seok | - |
dc.contributor.author | Lee, Heon | - |
dc.date.accessioned | 2021-09-08T10:18:16Z | - |
dc.date.available | 2021-09-08T10:18:16Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2010 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/118627 | - |
dc.description.abstract | A TiO2 nano-structure was formed on the indium-tin-oxide electrode of a GaN-based light-emitting diode (LED) in order to enhance the light extraction efficiency. The UV bi-layer imprinting and lift-off processes were used to form the TiO2 nano-structure without any plasma etching process, which can lead to degradation of the electrical properties of the device. As a result, the light output power of the LED on the patterned sapphire substrate (PSS) with the TiO2 nano-structure was enhanced up to 12% compared to identical LED formed on the PSS without TiO2 nano-structure. No electrical degradation was observed for the patterned LED device. (C) 2010 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.subject | PHOTONIC CRYSTALS | - |
dc.subject | NEAR-ULTRAVIOLET | - |
dc.subject | P-GAN | - |
dc.subject | SAPPHIRE | - |
dc.subject | RECOVERY | - |
dc.subject | DAMAGE | - |
dc.subject | LEDS | - |
dc.title | Formation of TiO2 Nano Pattern on GaN-Based Light-Emitting Diodes for Light Extraction Efficiency | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1143/JJAP.49.102103 | - |
dc.identifier.scopusid | 2-s2.0-78650147830 | - |
dc.identifier.wosid | 000283142900026 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.10 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 49 | - |
dc.citation.number | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PHOTONIC CRYSTALS | - |
dc.subject.keywordPlus | NEAR-ULTRAVIOLET | - |
dc.subject.keywordPlus | P-GAN | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordPlus | RECOVERY | - |
dc.subject.keywordPlus | DAMAGE | - |
dc.subject.keywordPlus | LEDS | - |
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