Improvement of the Light Output Power of GaN-Based Vertical Light Emitting Diodes by a Current Blocking Layer

Abstract

The light output characteristics of GaN-based vertical light emitting diodes (1 x 1 mm) fabricated by the multifunctional bonding material system have been investigated as a function of the linewidth of a SiO2 current blocking layer (CBL). As the CBL width increases from 0 to 20 mu m, the forward voltage increases from 2.82 to 2.88 V at 350 mA, whereas the reverse leakage current decreases from 4.90 x 10(-7) to 3.05 x 10(-7) A at -10 V. The output power increases with increasing CBL linewidth. Furthermore, the output power of all the samples continuously increases without saturation across the current range of 0-1000 mA. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3407625] All rights reserved.