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Effect of hydrogen on the physical and mechanical properties of silicon carbide-derived carbon films

Authors
Choi, Hyun-JuBae, Heung-TaekMcNallan, Michael J.Sohn, Yong-HoLim, Dae-Soon
Issue Date
25-12월-2009
Publisher
ELSEVIER SCIENCE SA
Keywords
Silicon carbide; Chlorination; Graphitization; Nanoindentation; Plasticity
Citation
SURFACE & COATINGS TECHNOLOGY, v.204, no.6-7, pp.1018 - 1021
Indexed
SCIE
SCOPUS
Journal Title
SURFACE & COATINGS TECHNOLOGY
Volume
204
Number
6-7
Start Page
1018
End Page
1021
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/118727
DOI
10.1016/j.surfcoat.2009.05.023
ISSN
0257-8972
Abstract
In this study, the effect of hydrogen on the structure and mechanical properties of carbon films produced by selective etching of monolithic SiC was examined. The process to produce carbon films from SiC (i.e., SiC-derived carbon, CDC) was carried out in a gas mixture of Cl-2 and H-2 at 1000 degrees C for 20 h. The Raman intensity ratio, I-D/I-G, where subscripts D and G refer to diamond and graphite, decreased as the hydrogen concentration in the gas mixture increased, indicating a decrease in the sp(2) carbon cluster. XRD analysis also showed that the fraction of graphitization decreased as the hydrogen concentration increased. The addition of hydrogen that prevented the formation of graphite (sp(2) bonding) also resulted in a reduction in the film thickness. The hardness and elastic modulus of the carbon films tended to decrease as the H-2 content increased owing to the contribution from the C-H bond and the nano-size pore. (C) 2009 Elsevier B.V. All rights reserved.
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