High-mobility pentacene thin-film phototransistor with poly-4-vinylphenol gate dielectric
DC Field | Value | Language |
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dc.contributor.author | Kwon, Jae-Hong | - |
dc.contributor.author | Chung, Myung-Ho | - |
dc.contributor.author | Oh, Tae-Yeon | - |
dc.contributor.author | Bae, Hyeon-Seok | - |
dc.contributor.author | Park, Jung-Ho | - |
dc.contributor.author | Ju, Byeong-Kwon | - |
dc.contributor.author | Yakuphanoglu, Fahrettin | - |
dc.date.accessioned | 2021-09-08T10:55:40Z | - |
dc.date.available | 2021-09-08T10:55:40Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2009-12 | - |
dc.identifier.issn | 0924-4247 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/118782 | - |
dc.description.abstract | An organic thin-film transistor was fabricated with pentacene as the active material and poly(4-vinyl phenol) as the gate-dielectric material. Atomic force microscope image shows that the pentacene film grows in the polycrystalline structure of the poly-4-vinylphenol (PVP) dielectric layer with the surface root-mean square (RMS) roughness of 6.0 nm and average grain size of 800 nm. The pentacene thin-film transistor exhibited a saturation field-effect mobility of 1.64 cm(2)/V s, a threshold voltage of -18 V, a sub-threshold swing of 3.53 V/decade, on/off-current ratio of 7.1 x 10(4) and interface trap density of 5.39 x 10(12) eV(-1) cm(-2). The higher mobility of pentacene on poly(4-vinyl phenol) layer is attributed to the larger grain size of the pentacene. The photoresponsive properties of the organic thin-film transistor were investigated under various illumination intensities. The photosensitivity was measured as 1.46 at an illumination intensity of 100 mW/cm(2) at the off state. This suggests that the pentacene thin-film transistor shows a phototransistor behavior. (C) 2009 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | ELECTRICAL CHARACTERISTICS | - |
dc.subject | ANALYTICAL-MODEL | - |
dc.subject | PERFORMANCE | - |
dc.title | High-mobility pentacene thin-film phototransistor with poly-4-vinylphenol gate dielectric | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ju, Byeong-Kwon | - |
dc.identifier.doi | 10.1016/j.sna.2009.10.011 | - |
dc.identifier.scopusid | 2-s2.0-71649083388 | - |
dc.identifier.wosid | 000272563900006 | - |
dc.identifier.bibliographicCitation | SENSORS AND ACTUATORS A-PHYSICAL, v.156, no.2, pp.312 - 316 | - |
dc.relation.isPartOf | SENSORS AND ACTUATORS A-PHYSICAL | - |
dc.citation.title | SENSORS AND ACTUATORS A-PHYSICAL | - |
dc.citation.volume | 156 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 312 | - |
dc.citation.endPage | 316 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRICAL CHARACTERISTICS | - |
dc.subject.keywordPlus | ANALYTICAL-MODEL | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | Organic thin-film transistor | - |
dc.subject.keywordAuthor | Pentacene | - |
dc.subject.keywordAuthor | Poly-4-vinylphenol | - |
dc.subject.keywordAuthor | Photoresponse | - |
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