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BaTiO3 Doped Na0.5K0.5NbO3 Thin Films Deposited by Using Eclipse Shutter Enhanced Pulsed Laser Deposition Method

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dc.contributor.authorChoi, J. S.-
dc.contributor.authorHwang, I. R.-
dc.contributor.authorHong, S. H.-
dc.contributor.authorOh, G. T.-
dc.contributor.authorChoi, J. A.-
dc.contributor.authorJeon, S. H.-
dc.contributor.authorKang, S. -O.-
dc.contributor.authorYalishev, Vadim Sh-
dc.contributor.authorPark, B. H.-
dc.contributor.authorChoi, Chang-Hak-
dc.contributor.authorAhn, Cheol-Woo-
dc.contributor.authorNahm, Sahn-
dc.contributor.authorAhn, Sang Jun-
dc.date.accessioned2021-09-08T11:01:45Z-
dc.date.available2021-09-08T11:01:45Z-
dc.date.issued2009-12-
dc.identifier.issn1533-4880-
dc.identifier.issn1533-4899-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/118814-
dc.description.abstractWe have investigated structural, electrical, and electro-mechanical properties of lead-free piezoelectric BaTiO3 doped Na0.5K0.5NbO3 (BTO-NKN) thin films deposited by pulsed laser deposition (PLD) methods. BTO-NKN thin films have been deposited on La0.5Sr0.5CoO3 (LSCO) bottom electrodes with LaAlO3 (LAO) substrates. X-ray diffraction data have shown that all the BTO-NKN and bottom electrodes are highly oriented with their c-axes normal to the substrates. In order to improve the morphology of BTO-NKN thin films, we have located an eclipse shutter between a target and a substrate. Root-mean-square roughness was changed from 91 nm to 21 nm with eclipse shutter enhanced PLD (E-PLD) method. Furthermore, the enhanced surface morphology leads to the improvement in electrical or electro-mechanical properties mainly due to increased density. Typical capacitance and d(33) values of a BTO-NKN film deposited by E-PLD method are 1000 pF and 30 pm/V, respectively.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.titleBaTiO3 Doped Na0.5K0.5NbO3 Thin Films Deposited by Using Eclipse Shutter Enhanced Pulsed Laser Deposition Method-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1166/jnn.2009.1759-
dc.identifier.wosid000270987900109-
dc.identifier.bibliographicCitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.9, no.12, pp 7354 - 7358-
dc.citation.titleJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.citation.volume9-
dc.citation.number12-
dc.citation.startPage7354-
dc.citation.endPage7358-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusPIEZOELECTRIC PROPERTIES-
dc.subject.keywordAuthorEclipse Method-
dc.subject.keywordAuthorBTO-NKN-
dc.subject.keywordAuthorLead-Free Piezoelectric-
dc.subject.keywordAuthorThin Film-
dc.subject.keywordAuthorPLD-
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