Influence of plasma-etch damage on the interface states in SOI structures investigated by capacitance-voltage measurements and simulations
DC Field | Value | Language |
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dc.contributor.author | Jo, Yeong-Deuk | - |
dc.contributor.author | Koh, Jung-Hyuk | - |
dc.contributor.author | Ha, Jae-Geun | - |
dc.contributor.author | Kim, Ji-Hong | - |
dc.contributor.author | Cho, Dae-Hyung | - |
dc.contributor.author | Moon, Byung-Moo | - |
dc.contributor.author | Koo, Sang-Mo | - |
dc.date.accessioned | 2021-09-08T11:05:44Z | - |
dc.date.available | 2021-09-08T11:05:44Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2009-12 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/118836 | - |
dc.description.abstract | Au/SiO2/n-Si metal-oxide-silicon-on-insulator (MOSOI) capacitors were fabricated to study the damage caused by reactive ion etching (RIE) on (1 1 0) oriented silicon-on-insulator (SOI) substrates. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measurements revealed that C-V curves significantly change and a negative voltage shift occurs for plasma-damaged capacitors. The simulated band diagram profiles and potential distribution of the corresponding structures indicate that the C-V shift is mainly due to the removal of a parasitic depletion capacitance (C-p) in the substrate, when the interface charges (Q(f)) are present at the gate oxide/SOI interface. For etch-damaged MOSOI samples, the surface roughness and the interface charges (Q(f)) have been found to increase by similar to 1.94 x 10(12) cm(-2) with respect to the reference devices, whereas the increase was reduced for sacrificial-oxidation treated samples, which implies a recovery from the plasma-induced etch damage on SOI structures. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | CHARGE-CARRIER MOBILITY | - |
dc.subject | MODEL | - |
dc.title | Influence of plasma-etch damage on the interface states in SOI structures investigated by capacitance-voltage measurements and simulations | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Moon, Byung-Moo | - |
dc.identifier.doi | 10.1088/0268-1242/24/12/125005 | - |
dc.identifier.scopusid | 2-s2.0-77954336709 | - |
dc.identifier.wosid | 000272161700006 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.24, no.12 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 24 | - |
dc.citation.number | 12 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | CHARGE-CARRIER MOBILITY | - |
dc.subject.keywordPlus | MODEL | - |
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