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Phase changeable silver selenide thin films fabricated by pulse electrodeposition

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dc.contributor.authorAn, Boo Hyun-
dc.contributor.authorJi, Hye Min-
dc.contributor.authorWu, Jun-Hua-
dc.contributor.authorCho, Moon Kyu-
dc.contributor.authorYang, Ki-Yeon-
dc.contributor.authorLee, Heon-
dc.contributor.authorKim, Young Keun-
dc.date.accessioned2021-09-08T11:53:44Z-
dc.date.available2021-09-08T11:53:44Z-
dc.date.created2021-06-11-
dc.date.issued2009-11-
dc.identifier.issn1567-1739-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/118968-
dc.description.abstractWe have used a simple and direct method to successfully prepare Ag2Se thin films by pulse electrodeposition from a single aqueous solution of Ag and Se ions. The composition analysis confirms the stoichiometry and the morphological characterization shows that the thin films are dense and smooth. The films have the orthorhombic structure of regular Ag2Se materials at room temperature, while the electrical measurements reveal an interesting electrical behavior, similar to that of the Ag2Se nanowire arrays. The Ag2Se thin films were successfully deposited into polymer templates to form well-defined Ag2Se nanostructure, which provides a possibility to apply the method to high density, non-volatile memories based on phase change materials. (c) 2009 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectTRANSPORT-PROPERTIES-
dc.subjectAG2SE-
dc.subjectCHALCOGENIDES-
dc.subjectDEPENDENCE-
dc.subjectTRANSITION-
dc.subjectNANOWIRES-
dc.subjectSTORAGE-
dc.subjectMEMORY-
dc.titlePhase changeable silver selenide thin films fabricated by pulse electrodeposition-
dc.typeArticle-
dc.contributor.affiliatedAuthorLee, Heon-
dc.contributor.affiliatedAuthorKim, Young Keun-
dc.identifier.doi10.1016/j.cap.2008.12.017-
dc.identifier.scopusid2-s2.0-67349159705-
dc.identifier.wosid000267151300036-
dc.identifier.bibliographicCitationCURRENT APPLIED PHYSICS, v.9, no.6, pp.1338 - 1340-
dc.relation.isPartOfCURRENT APPLIED PHYSICS-
dc.citation.titleCURRENT APPLIED PHYSICS-
dc.citation.volume9-
dc.citation.number6-
dc.citation.startPage1338-
dc.citation.endPage1340-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.identifier.kciidART001395708-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTRANSPORT-PROPERTIES-
dc.subject.keywordPlusAG2SE-
dc.subject.keywordPlusCHALCOGENIDES-
dc.subject.keywordPlusDEPENDENCE-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusNANOWIRES-
dc.subject.keywordPlusSTORAGE-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordAuthorSilver selenide-
dc.subject.keywordAuthorElectrodeposition-
dc.subject.keywordAuthorPhase changeable memory-
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공과대학 (신소재공학부)
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