Understanding of a-Si:H(p)/c-Si(n) heterojunction solar cell through analysis of cells with point-contacted p/n junction
DC Field | Value | Language |
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dc.contributor.author | Ok, Young-Woo | - |
dc.contributor.author | Kang, Min-Gu | - |
dc.contributor.author | Kim, Donghwan | - |
dc.contributor.author | Lee, Jeong Chul | - |
dc.contributor.author | Yoon, Kyung Hoon | - |
dc.date.accessioned | 2021-09-08T11:57:44Z | - |
dc.date.available | 2021-09-08T11:57:44Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2009-11 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/118990 | - |
dc.description.abstract | We fabricated point-contacted a-Si:H(p)/c-Si(n) heterojunction solar cells using patterned SiO2 and investigated their electrical properties using the light current-voltage (I-V) curve and Suns-V,, measurements. The light I-V curves showed bias-dependent changes according to the applied voltage in the point-contacted cells, especially in the samples with a long distance between the point-contacted junctions. The Suns-V,, measurements showed that the bias-dependence of the light I-V curves did not originate from the recombination in the SiO2/Si or a-Si:H(p)/c-Si(n) interface, but from the series resistances. It is possible to explain the bias-dependent light I-V curve in terms of the conductivity of a-Si:H(p) and difference in the electrical contact properties between a-Si:H(p), ZnO and c-Si(n). These results mean that the electrical properties of the a-Si:H(p) layer and the contact properties with this layer are also critical to obtain a high J(sc) and fill factor in n-type based Si heterojunction solar cells. (C) 2009 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Understanding of a-Si:H(p)/c-Si(n) heterojunction solar cell through analysis of cells with point-contacted p/n junction | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Donghwan | - |
dc.identifier.doi | 10.1016/j.cap.2009.01.010 | - |
dc.identifier.scopusid | 2-s2.0-67349155554 | - |
dc.identifier.wosid | 000267151300002 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.9, no.6, pp.1186 - 1190 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1186 | - |
dc.citation.endPage | 1190 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001395667 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Heterojunction | - |
dc.subject.keywordAuthor | Solar cells | - |
dc.subject.keywordAuthor | a-Si/c-Si | - |
dc.subject.keywordAuthor | I-V analysis | - |
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