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Proton irradiation effects on Sb-based heterojunction bipolar transistors

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dc.contributor.authorLo, C. F.-
dc.contributor.authorKim, H. -Y.-
dc.contributor.authorKim, J.-
dc.contributor.authorChen, Shu-Han-
dc.contributor.authorWang, Sheng-Yu-
dc.contributor.authorChyi, Jen-Inn-
dc.contributor.authorChou, B. Y.-
dc.contributor.authorChen, K. H.-
dc.contributor.authorWang, Y. L.-
dc.contributor.authorChang, C. Y.-
dc.contributor.authorPearton, S. J.-
dc.contributor.authorKravchenko, L. I.-
dc.contributor.authorJang, S.-
dc.contributor.authorRen, F.-
dc.date.accessioned2021-09-08T12:18:21Z-
dc.date.available2021-09-08T12:18:21Z-
dc.date.created2021-06-11-
dc.date.issued2009-11-
dc.identifier.issn1071-1023-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/119062-
dc.description.abstractIn0.52Al0.48As/In0.39Ga0.61As0.77Sb0.23/In0.53Ga0.47As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2x10(11) to 2x10(15) protons/cm(2). The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2x10(11) cm(-2), which was equivalent to around 40 years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well suited to space or nuclear industry applications.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherA V S AMER INST PHYSICS-
dc.subjectNEUTRON-
dc.titleProton irradiation effects on Sb-based heterojunction bipolar transistors-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, J.-
dc.identifier.doi10.1116/1.3246405-
dc.identifier.wosid000272803400001-
dc.identifier.bibliographicCitationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.27, no.6, pp.L33 - L37-
dc.relation.isPartOfJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B-
dc.citation.titleJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B-
dc.citation.volume27-
dc.citation.number6-
dc.citation.startPageL33-
dc.citation.endPageL37-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusNEUTRON-
dc.subject.keywordAuthoraluminium compounds-
dc.subject.keywordAuthorgallium arsenide-
dc.subject.keywordAuthorgallium compounds-
dc.subject.keywordAuthorheterojunction bipolar transistors-
dc.subject.keywordAuthorIII-V semiconductors-
dc.subject.keywordAuthorindium compounds-
dc.subject.keywordAuthorproton effects-
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