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Thin film silicon substrate formation using electrochemical anodic etching method
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kwon, J. -H. | - |
| dc.contributor.author | Lee, S. -H. | - |
| dc.contributor.author | Ju, B. -K. | - |
| dc.date.accessioned | 2021-09-08T12:22:44Z | - |
| dc.date.available | 2021-09-08T12:22:44Z | - |
| dc.date.created | 2021-06-11 | - |
| dc.date.issued | 2009-11 | - |
| dc.identifier.issn | 0267-0844 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119085 | - |
| dc.description.abstract | The production of detached porous silicon (PS) layers for layer transfer (LT) has been investigated. Electrochemical anodisation (ECA) studies of monocrystalline silicon (mono-Si) wafers in a hydrofluoric acid/ethanol/deionised (DI) water solution showed that porosity can be controlled by controlling current density during ECA. Double layered PS layers consisting of low (26.5%) and high (86.3%) porosity layers were formed by ECA at 1.5 mA cm(-2) and 100 mA cm(-2) for etching times of 10 min and 10 sec respectively. These PS layers are considered viable for LT substrate technology. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | TAYLOR & FRANCIS LTD | - |
| dc.subject | POROUS SILICON | - |
| dc.subject | LAYER | - |
| dc.title | Thin film silicon substrate formation using electrochemical anodic etching method | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Ju, B. -K. | - |
| dc.identifier.doi | 10.1179/174329408X326849 | - |
| dc.identifier.scopusid | 2-s2.0-70349280604 | - |
| dc.identifier.wosid | 000269757600009 | - |
| dc.identifier.bibliographicCitation | SURFACE ENGINEERING, v.25, no.8, pp.603 - 605 | - |
| dc.relation.isPartOf | SURFACE ENGINEERING | - |
| dc.citation.title | SURFACE ENGINEERING | - |
| dc.citation.volume | 25 | - |
| dc.citation.number | 8 | - |
| dc.citation.startPage | 603 | - |
| dc.citation.endPage | 605 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
| dc.subject.keywordPlus | POROUS SILICON | - |
| dc.subject.keywordPlus | LAYER | - |
| dc.subject.keywordAuthor | Porous silicon | - |
| dc.subject.keywordAuthor | Electrochemical etching | - |
| dc.subject.keywordAuthor | Anodisation | - |
| dc.subject.keywordAuthor | Layer transfer | - |
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