A Flexible Amorphous Bi5Nb3O15 Film for the Gate Insulator of the Low-Voltage Operating Pentacene Thin-Film Transistor Fabricated at Room Temperature
DC Field | Value | Language |
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dc.contributor.author | Cho, Kyung-Hoon | - |
dc.contributor.author | Seong, Tae-Geun | - |
dc.contributor.author | Choi, Joo-Young | - |
dc.contributor.author | Kim, Jin-Seong | - |
dc.contributor.author | Kwon, Jae-Hong | - |
dc.contributor.author | Shing, Sang-Il | - |
dc.contributor.author | Chung, Myung-Ho | - |
dc.contributor.author | Ju, Byeong-Kwon | - |
dc.contributor.author | Nahm, Sahn | - |
dc.date.accessioned | 2021-09-08T12:27:24Z | - |
dc.date.available | 2021-09-08T12:27:24Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2009-10-20 | - |
dc.identifier.issn | 0743-7463 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119104 | - |
dc.description.abstract | The amorphous Bi5Nb3O15 film grown at room temperature under all oxygen-plasma sputtering ambient (BNRT-O-2 film) has a hydrophobic surface with a surface energy of 35.6 mJ m(-2), which is close to that of the orthorhombic pentacene (38 mJ m(-2)), resulting in the formation of a good pentacene layer without the introduction of all additional polymer layer. This film was very flexible, maintaining a high capacitance of 145 nF cm(-2) during and after 10(5) bending cycles with a small curvature radius of 7.5 mill. This film was optically transparent. Furthermore, the flexible, pentacene-based, organic thin-film transistors (OTFTs) fabricated oil the poly(ether sulfone) substrate at room temperature using a BNRT-O-2 film as a gate insulator exhibited a promising device performance with a high field effect mobility of 0.5 cm(2) V-1 s(-1), an on/off current modulation of 10(5), and a small subthreshold slope of 0.2 V decade(-1) under a low operating voltage of -5 V. This device also maintained a high carrier mobility of 0.45 cm(2) V-1 s(-1) during the bending with a small curvature radius of 9 mm. Therefore, the BNRT-O-2 film is considered a promising material for the gate insulator of the flexible, pentacene-based OTFT. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | ORGANIC TRANSISTORS | - |
dc.subject | MIM CAPACITORS | - |
dc.subject | DIELECTRICS | - |
dc.subject | CIRCUITS | - |
dc.subject | MOBILITY | - |
dc.subject | LAYER | - |
dc.title | A Flexible Amorphous Bi5Nb3O15 Film for the Gate Insulator of the Low-Voltage Operating Pentacene Thin-Film Transistor Fabricated at Room Temperature | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ju, Byeong-Kwon | - |
dc.contributor.affiliatedAuthor | Nahm, Sahn | - |
dc.identifier.doi | 10.1021/la9016504 | - |
dc.identifier.scopusid | 2-s2.0-84863011931 | - |
dc.identifier.wosid | 000270594500053 | - |
dc.identifier.bibliographicCitation | LANGMUIR, v.25, no.20, pp.12349 - 12354 | - |
dc.relation.isPartOf | LANGMUIR | - |
dc.citation.title | LANGMUIR | - |
dc.citation.volume | 25 | - |
dc.citation.number | 20 | - |
dc.citation.startPage | 12349 | - |
dc.citation.endPage | 12354 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | ORGANIC TRANSISTORS | - |
dc.subject.keywordPlus | MIM CAPACITORS | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | LAYER | - |
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