Wafer-level fabrication of GaN-based vertical light-emitting diodes using a multi-functional bonding material system
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Sang Youl | - |
dc.contributor.author | Choi, Kwang Ki | - |
dc.contributor.author | Jeong, Hwan-Hee | - |
dc.contributor.author | Choi, Hee Seok | - |
dc.contributor.author | Oh, Tchang-Hun | - |
dc.contributor.author | Song, June O. | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-08T13:51:35Z | - |
dc.date.available | 2021-09-08T13:51:35Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-09 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119388 | - |
dc.description.abstract | We first report on the fabrication of 2 inch wafer-level GaN-based vertical light-emitting diodes (LEDs) by using a multi-functional bonding material system, which is composed of a thick Cu diffusion barrier and a bonding layer. The bonding material system superbly absorbs laser-induced stress and also effectively serves as a barrier to the indiffusion of Sn to the active region. Fully packaged vertical LEDs fabricated with indium tin oxide (ITO)/AgCu contact and the bonding material system give an operating voltage of 3.35 V at 350 mA. After over 1800 h, the operating voltages remain stable, and the reverse currents are in the range 3-8 x 10(-7) A at -5 V. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | LASER LIFT-OFF | - |
dc.subject | CURRENT INJECTION | - |
dc.subject | PERFORMANCE | - |
dc.subject | SUBSTRATE | - |
dc.subject | ENHANCEMENT | - |
dc.subject | METAL | - |
dc.subject | LEDS | - |
dc.title | Wafer-level fabrication of GaN-based vertical light-emitting diodes using a multi-functional bonding material system | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1088/0268-1242/24/9/092001 | - |
dc.identifier.wosid | 000269292500001 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.24, no.9 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 24 | - |
dc.citation.number | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | LASER LIFT-OFF | - |
dc.subject.keywordPlus | CURRENT INJECTION | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | LEDS | - |
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