Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction
DC Field | Value | Language |
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dc.contributor.author | Hong, Eun-Ju | - |
dc.contributor.author | Byeon, Kyeong-Jae | - |
dc.contributor.author | Park, Hyoungwon | - |
dc.contributor.author | Hwang, Jaeyeon | - |
dc.contributor.author | Lee, Heon | - |
dc.contributor.author | Choi, Kyungwoo | - |
dc.contributor.author | Jung, Gun Young | - |
dc.date.accessioned | 2021-09-08T15:26:03Z | - |
dc.date.available | 2021-09-08T15:26:03Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-07-25 | - |
dc.identifier.issn | 0921-5107 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119650 | - |
dc.description.abstract | Moth-eye structures were produced on a p-GaN top cladding layer by UV imprint and inductively coupled plasma (ICP) etch processes in order to improve the light extraction efficiency of GaN-based green light-emitting diodes (LEDs). The height and shape of moth-eye structures were adjusted by controlling the thickness of Cr mask layer and ICP etching time. The transmittance of LED device stacks with moth-eye structure was increased up to 1.5-2.5 times, compared to identical LED sample without moth-eye structure and the intensity of photoluminescence from the InGaN multi-quantum well layer of LED sample with moth-eye structure was 5-7 times higher than that of the LED sample without the moth-eye structure. (C) 2009 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | EMITTING-DIODES | - |
dc.subject | NANOIMPRINT LITHOGRAPHY | - |
dc.subject | EFFICIENCY | - |
dc.subject | POWER | - |
dc.title | Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1016/j.mseb.2009.05.018 | - |
dc.identifier.scopusid | 2-s2.0-67650269389 | - |
dc.identifier.wosid | 000268944400007 | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, v.163, no.3, pp.170 - 173 | - |
dc.relation.isPartOf | MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | - |
dc.citation.title | MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | - |
dc.citation.volume | 163 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 170 | - |
dc.citation.endPage | 173 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | EMITTING-DIODES | - |
dc.subject.keywordPlus | NANOIMPRINT LITHOGRAPHY | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordAuthor | Moth-eye structure | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | Photon extraction efficiency | - |
dc.subject.keywordAuthor | Green LED | - |
dc.subject.keywordAuthor | Photoluminescence | - |
dc.subject.keywordAuthor | Nanoimprint lithography | - |
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