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Phase change and electrical characteristics of Ge-Se-Te alloys
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Eui-Bok | - |
| dc.contributor.author | Ju, Byeong-Kwon | - |
| dc.contributor.author | Kim, Yong-Tae | - |
| dc.date.accessioned | 2021-09-08T16:00:18Z | - |
| dc.date.available | 2021-09-08T16:00:18Z | - |
| dc.date.created | 2021-06-10 | - |
| dc.date.issued | 2009-07 | - |
| dc.identifier.issn | 0167-9317 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119788 | - |
| dc.description.abstract | Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys. (C) 2009 Elsevier B.V. All rights reserved. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | ELSEVIER | - |
| dc.subject | MEMORY | - |
| dc.subject | CRYSTALLIZATION | - |
| dc.subject | SB | - |
| dc.title | Phase change and electrical characteristics of Ge-Se-Te alloys | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Ju, Byeong-Kwon | - |
| dc.identifier.doi | 10.1016/j.mee.2009.03.089 | - |
| dc.identifier.scopusid | 2-s2.0-67349118350 | - |
| dc.identifier.wosid | 000267460100111 | - |
| dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.86, no.7-9, pp.1950 - 1953 | - |
| dc.relation.isPartOf | MICROELECTRONIC ENGINEERING | - |
| dc.citation.title | MICROELECTRONIC ENGINEERING | - |
| dc.citation.volume | 86 | - |
| dc.citation.number | 7-9 | - |
| dc.citation.startPage | 1950 | - |
| dc.citation.endPage | 1953 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Optics | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Optics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | MEMORY | - |
| dc.subject.keywordPlus | CRYSTALLIZATION | - |
| dc.subject.keywordPlus | SB | - |
| dc.subject.keywordAuthor | Phase change materials | - |
| dc.subject.keywordAuthor | Ge-Se-Te alloys | - |
| dc.subject.keywordAuthor | Chalcogenide | - |
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