Electrical characterization of Ge-Sb-Te phase change nano-pillars using conductive atomic force microscopy
DC Field | Value | Language |
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dc.contributor.author | Bae, Byeong-Ju | - |
dc.contributor.author | Hong, Sung-Hoon | - |
dc.contributor.author | Hwang, Seon-Yong | - |
dc.contributor.author | Hwang, Jae-Yeon | - |
dc.contributor.author | Yang, Ki-Yeon | - |
dc.contributor.author | Lee, Heon | - |
dc.date.accessioned | 2021-09-08T16:01:00Z | - |
dc.date.available | 2021-09-08T16:01:00Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-07 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119792 | - |
dc.description.abstract | The electrical characteristic of phase change material was studied in nano-scale using nanoimprint lithography and a conducting atomic force microscopy measurement system. Nanoimprint lithography was used to fabricate the nano-scale phase change material pattern. A Pt-coated AFM tip was used as a top electrode to measure the electrical characteristics of the GST nano-pillar. The GST nano-pillar, which is 200 nm in diameter, was amorphized by 2 V and 5 ns reset pulse and was then brought back to the crystalline phase by applying 1.3 V and 150 ns set pulse. Using this measurement system, the GST nano-pillar was switched between the amorphous and crystalline phases more than five times. The results of the reset and the set current measurement with the GST nano-pillar sizes show that the reset and the set currents also decreased with the decrease of the GST pillar size. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | NONVOLATILE | - |
dc.subject | IMPRINT | - |
dc.title | Electrical characterization of Ge-Sb-Te phase change nano-pillars using conductive atomic force microscopy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1088/0268-1242/24/7/075016 | - |
dc.identifier.scopusid | 2-s2.0-68949085197 | - |
dc.identifier.wosid | 000267402800017 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.24, no.7 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 24 | - |
dc.citation.number | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | NONVOLATILE | - |
dc.subject.keywordPlus | IMPRINT | - |
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