Effect of Interface Roughness on Magnetoresistance and Magnetization Switching in Double-Barrier Magnetic Tunnel Junction
DC Field | Value | Language |
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dc.contributor.author | Hwang, J. Y. | - |
dc.contributor.author | Lee, S. Y. | - |
dc.contributor.author | Lee, N. I. | - |
dc.contributor.author | Yim, H. I. | - |
dc.contributor.author | Kim, M. Y. | - |
dc.contributor.author | Lee, W. C. | - |
dc.contributor.author | Rhee, J. R. | - |
dc.contributor.author | Chun, B. S. | - |
dc.contributor.author | Kim, T. W. | - |
dc.contributor.author | Kim, Y. K. | - |
dc.contributor.author | Lee, S. S. | - |
dc.contributor.author | Hwang, D. G. | - |
dc.contributor.author | Ri, E. J. | - |
dc.date.accessioned | 2021-09-08T16:27:01Z | - |
dc.date.available | 2021-09-08T16:27:01Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-06 | - |
dc.identifier.issn | 0018-9464 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119906 | - |
dc.description.abstract | The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si15B10 (in at. %) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free-layer 7/AlOx/CoFe 7/IrMn 10/Ru 60 (thickness in nm). Various free layers, such as CoFe 7, CoFeSiB 7, and CoFe 1.5/CoFeSiB 4/CoFe 1.5 were prepared and compared. The roughness values of the interface between free-layer and tunnel barrier were confirmed by using the techniques of X-ray reflectivity and transmission electron microscopy. As a result, the amorphous free-layer made the interface roughness of DMTJ smoother, reducing the interlayer coupling field and suppressing the bias voltage dependence of TMR ratio at a given voltage. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | BIAS VOLTAGE | - |
dc.title | Effect of Interface Roughness on Magnetoresistance and Magnetization Switching in Double-Barrier Magnetic Tunnel Junction | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Y. K. | - |
dc.identifier.doi | 10.1109/TMAG.2009.2018586 | - |
dc.identifier.wosid | 000266329800012 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp.2396 - 2398 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.citation.title | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.citation.volume | 45 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2396 | - |
dc.citation.endPage | 2398 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | BIAS VOLTAGE | - |
dc.subject.keywordAuthor | Amorphous ferromagnetic | - |
dc.subject.keywordAuthor | bias voltage dependence | - |
dc.subject.keywordAuthor | CoFeSiB | - |
dc.subject.keywordAuthor | magnetic tunnel junction | - |
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