Transport Properties of Magnetic Tunnel Junctions Comprising NiFeSiB/CoFeB Hybrid Free Layers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Ji Ung | - |
dc.contributor.author | Kim, Do Kyun | - |
dc.contributor.author | Tan, Reasmey P. | - |
dc.contributor.author | Isogami, Shinji | - |
dc.contributor.author | Tsunoda, Masakiyo | - |
dc.contributor.author | Takahashi, Migaku | - |
dc.contributor.author | Kim, Young Keun | - |
dc.date.accessioned | 2021-09-08T16:27:28Z | - |
dc.date.available | 2021-09-08T16:27:28Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-06 | - |
dc.identifier.issn | 0018-9464 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119908 | - |
dc.description.abstract | We report on the magneto-transport measurements of MgO magnetic tunnel junctions (MTJs) composed of NiFeSiB/CoFeB as the free layer for two different structures (top-type and bottom-type pinning). The magneto-transport properties of these MTJs were investigated by varying the thickness of the amorphous NiFeSiB layer for a fixed CoFeB thickness. The tunnel magnetoresistance (TMR), measured in both type of structures, exhibit the same or a higher amplitude (up to 230% measured at room temperature in the case of top-type device), comparing to the case of a single CoFeB free layer. These results suggest that hybrids free layers can be used as good candidates for MTJs with reduced saturation magnetization while keeping a high TMR ratio. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | MAGNETORESISTANCE | - |
dc.title | Transport Properties of Magnetic Tunnel Junctions Comprising NiFeSiB/CoFeB Hybrid Free Layers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Young Keun | - |
dc.identifier.doi | 10.1109/TMAG.2009.2018574 | - |
dc.identifier.wosid | 000266329800003 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp.2364 - 2366 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.citation.title | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.citation.volume | 45 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2364 | - |
dc.citation.endPage | 2366 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
dc.subject.keywordAuthor | Amorphous | - |
dc.subject.keywordAuthor | hybrid free layer | - |
dc.subject.keywordAuthor | magnetic tunnel junction | - |
dc.subject.keywordAuthor | NiFeSiB | - |
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