Transport Properties of a DNA-Conjugated Single-Wall Carbon Nanotube Field-Effect Transistor
- Authors
- Hwang, JongSeung; Kim, Duk Soo; Ahn, Doyeol; Hwang, Sung Woo
- Issue Date
- 6월-2009
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.48, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 48
- Number
- 6
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/119920
- DOI
- 10.1143/JJAP.48.06FD08
- ISSN
- 0021-4922
- Abstract
- We performed electrical transport measurements on a DNA-conjugated single-wall carbon nanotube (SWCNT) field-effect transistor (FET) at various temperatures (Ts). At T = 300 K, the gate action of the SWCNT FET clearly exhibited n-type behavior, while the bare SWCNT FET showed usual p-type characteristics. The value of the drain current measured from the DNA-conjugated SWCNT FET decreased rapidly with the decrease of T. We fit the T-dependence of the DNA-conjugated SWCNT FET with a simple back-to-back Schottky diode model and found a slight decrease of Phi(B) with decreasing T. A possible explanation for the type conversion is the chemical modification of the CNT surface as a result of the conjugation process. (C) 2009 The Japan Society of Applied Physics
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