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Nanoparticle Assemblies as Memristors

Authors
Kim, Tae HeeJang, Eun YoungLee, Nyun JongChoi, Deung JangLee, Kyung-JinJang, Jung-takChoi, Jin-silMoon, Seung HoCheon, Jinwoo
Issue Date
6월-2009
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.9, no.6, pp.2229 - 2233
Indexed
SCIE
SCOPUS
Journal Title
NANO LETTERS
Volume
9
Number
6
Start Page
2229
End Page
2233
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/119950
DOI
10.1021/nl900030n
ISSN
1530-6984
Abstract
Recently a memristor (Chua, L. O. IEEE Trans. Circuit Theory 1971, 18, 507), the fourth fundamental passive circuit element, has been demonstrated as thin film device operations (Strukov, D. B.; Snider, G. S.; Stewart, D. R.; Williams, R. S. Nature (London) 2008, 453, 80; Yang, J. J.; Pickett. M. D.; Li, X.; Ohlberg, D. A. A.; Stewart, D. R.; Williams, R. S. Nat. Nanotechnot. 2008, 3, 429). A new addition to the memristor family can be nanoparticle assemblies consisting of an infinite number of monodispersed, crystalline magnetite (Fe3O4) particles. Assembly of nanoparticles that have sizes below 10 nm, exhibits at room temperature a voltage-current hysteresis with an abrupt and large bipolar resistance switching (R-OFF/R-ON approximate to 20). Interestingly, observed behavior could be interpreted by adopting an extended memristor model that combines both a time-dependent resistance and a time-dependent capacitance. We also observed that such behavior is not restricted to magnetites; it is a general property of nanoparticle assemblies as it was consistently observed in different types of spinel structured nanoparticles with different sizes and compositions. Further investigation into this new nanoassembly system will be of importance to the realization of the next generation nanodevices with potential advantages of simpler and inexpensive device fabrications.
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