Extracting Mobility Degradation and Total Series Resistance of Cylindrical Gate-All-Around Silicon Nanowire Field-Effect Transistors

Abstract

The mobility-degradation factor and the series resistance of cylindrical gate-all-around silicon nanowire field-effect transistors are extracted using the same mobility-degradation model as in the case of planar MOSFETs. The extraction is done by defining an asymptotic voltage as a function of the saturation current measured from devices with various lengths. The extracted mobility-degradation factor is an order of magnitude larger than those of other planar MOSFETs. This result suggests that, while the all-around gate can turn off the electron channel effectively, it creates more interface scattering in the strong inversion condition. The extracted series resistance is mostly due to the crowding of the electron flow along the sidewall of the n+ contact region making an abrupt joint with the nanowire.