Electrical Properties of Bi5Nb3O15 Thin Film Grown on TiN/SiO2/Si at Room Temperature for Metal-Insulator-Metal Capacitors

Abstract

Buckling was observed in Bi5Nb3O15 (BiNbO) films grown on TiN/SiO2/Si at 300 degrees C but not in films grown at room temperature and annealed at 350 degrees C. The 45-nm-thick films showed a high capacitance density and a low dissipation factor of 8.81 fF/mu m(2) and 0.97% at 100 kHz, respectively, with a low leakage current density of 3.46 nA/cm(2) at 2 V. The quadratic and linear voltage coefficients of capacitance of this film were 846 ppm/V-2 and 137 ppm/V, respectively, with a low temperature coefficient of capacitance of 226 ppm/degrees C at 100 kHz. This suggests that a BiNbO film grown on a TiN/SiO2/Si substrate is a good candidate material for high-performance metal-insulator-metal capacitors.