Non-volatile Ferroelectric Poly(vinylidene fluoride-co-trifluoroethylene) Memory Based on a Single-Crystalline Tri-isopropylsilylethynyl Pentacene Field-Effect Transistor
- Authors
- Kang, Seok Ju; Bae, Insung; Park, Youn Jung; Park, Tae Ho; Sung, Jinwoo; Yoon, Sung Cheol; Kim, Kyung Hwan; Choi, Dong Hoon; Park, Cheolmin
- Issue Date
- 22-5월-2009
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- ADVANCED FUNCTIONAL MATERIALS, v.19, no.10, pp.1609 - 1616
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED FUNCTIONAL MATERIALS
- Volume
- 19
- Number
- 10
- Start Page
- 1609
- End Page
- 1616
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/120029
- DOI
- 10.1002/adfm.200801097
- ISSN
- 1616-301X
- Abstract
- A new type of nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) memory based on an organic thin-film transistor (OTFT) with a single crystal of tri-isopropylsilylethynyl pentacene (TIPS-PEN) as the active layer is developed. A bottom-gate OTFT is fabricated with a thin P(VDF-TrFE) film gate insulator on which a one-dimensional ribbon-type TIPS-PEN single crystal, grown via a solvent-exchange method, is positioned between the Au source and drain electrodes. Post-thermal treatment optimizes the interface between the flat, single-crystalline ab plane of TIPS-PEN and the polycrystalline P(VDF-TrFE) surface with characteristic needle-like crystalline lamellae. As a consequence, the memory device exhibits a substantially stable source-drain current modulation with an ON/OFF ratio hysteresis greater than 10(3), which is superior to a ferroelectric P(VDF-TrFE) OTFT that has a vacuum-evaporated pentacene layer. Data retention longer than 5 x 10(4) s is additionally achieved in ambient conditions by incorporating an interlayer between the gate electrode and P(VDF-TrFE) thin film. The device is environmentally stable for more than 40 days without additional passivation. The deposition of a seed solution of TIPS-PEN on the chemically micropatterned surface allows fabrication arrays of TIPS-PEN single crystals that can be potentially useful for integrated arrays of ferroelectric TFT memory.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Science > Department of Chemistry > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.