Nature of luminescence and strain in gallium nitride nanowires
DC Field | Value | Language |
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dc.contributor.author | Mastro, M. A. | - |
dc.contributor.author | Maximenko, S. | - |
dc.contributor.author | Gowda, M. | - |
dc.contributor.author | Simpkins, B. S. | - |
dc.contributor.author | Pehrsson, P. E. | - |
dc.contributor.author | Long, J. P. | - |
dc.contributor.author | Makinen, A. J. | - |
dc.contributor.author | Freitas, J. A., Jr. | - |
dc.contributor.author | Hite, J. K. | - |
dc.contributor.author | Eddy, C. R., Jr. | - |
dc.contributor.author | Kim, J. | - |
dc.date.accessioned | 2021-09-08T17:18:00Z | - |
dc.date.available | 2021-09-08T17:18:00Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-05-01 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/120066 | - |
dc.description.abstract | Photo- and cathodo-luminescence measurements of a variable-diameter ensemble of GaN nanowires revealed a diameter-dependent, spectral emission distribution between 350 nm and 850 nm. Spectral analysis indicated that wires with a diameter less than 400 nm were dominated by a yellow luminescence with a weaker near UV/violet emission also present. Examination of this ensemble showed that there was a general trend in the ratio of near-UV-to-yellow emission intensities with increasing nanowire diameter. Additionally, a broad green emission appears in the nanowires with a diameter above approximately 200 nm. A calculation based on the nanoheteroepitaxy model indicates that this diameter represents a transitional thickness where strain is relieved by defect formation mechanisms with a characteristic green emission. Published by Elsevier B.V. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | GROWTH | - |
dc.subject | GAN | - |
dc.subject | NANOHETEROEPITAXY | - |
dc.subject | SI | - |
dc.title | Nature of luminescence and strain in gallium nitride nanowires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, J. | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2009.01.053 | - |
dc.identifier.scopusid | 2-s2.0-65749097862 | - |
dc.identifier.wosid | 000267302900057 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.311, no.10, pp.2982 - 2986 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 311 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 2982 | - |
dc.citation.endPage | 2986 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | NANOHETEROEPITAXY | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordAuthor | Stresses | - |
dc.subject.keywordAuthor | Gallium compounds | - |
dc.subject.keywordAuthor | Nanomaterials | - |
dc.subject.keywordAuthor | Semiconducting gallium compounds | - |
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